Dr. Filippo GIANNAZZOH-Index: 53
Consiglio Nacionale delle Ricerche (CNR) - Institute for Microelectronics and Microsystems of Catania, Italy, EU
Positions: Research Director at Consiglio Nacionale delle Ricerche (CNR) - Institute for Microelectronics and Microsystems of Catania, Italy
Specialization: SPM methods for characterization of transport properties in advanced materials for nanoelectronics; Integration of graphene and other 2D materials for advanced electronics applications.
At the NANOCON´25 conference Filippo Giannazzo will open the Session E – Session E - Advanced Methods of Preparation and Characterization of Nanomaterials by his invited talk “Electrical scanning probe microscopy of 2D materials and their heterostructures with wide-bandgap semiconductors for advanced electronics”.
Personal Background and Education:
Dr. Filippo Giannazzo (*1974) got the Degree in Physics (cum laude) in 1998 and the PhD in Materials Science in 2002 from the University of Catania. In 2000 he was visiting Scientist at ETH, Zurich. From 2001 to 2005 he was post-doc fellow first at the Department of Physics, University of Catania, and then at the Institute for Microelectronics and Microsystems of the National Research Council of Italy (IMM-CNR).
From 2005 he is researcher and from 2020 he is Research Director at IMM-CNR of Catania, where he is in charge of the research activity on “Nanotechnology and advanced technologies for high performant power and RF integrated electronics”.
Research interests:
His research interests cover the following aspects of materials science and nanotechnology:
- Scanning probe microscopy (SPM) methods for the characterization of transport properties in advanced materials for micro and nano-electronics (compound semiconductors, nanostructured metal films, high k or giant k dielectrics, organics, graphene).
- Development of advanced processes for the fabrication of high-power and/or high frequency devices based on compound semiconductors (SiC, GaN and related heterostructures).
- Synthesis and high resolution structural and electrical investigation of graphene and other 2D materials beyond graphene (MoS2, 2D-Nitrides,..). Development of novel devices based on 2D material heterostructures with wide-bandgap semiconductors.
In 2004 he was awarded with the SISM award from the Italian Society of Microscopical Science reserved to young scientists on material science for their activity on microscopy.
Summary of publication activity:
Author and co-author of 350 papers international peer-reviewed journals and 10 book chapters; The number of total citations >10.000 and H-index: 53 (Google Scholar, February 2025); ORCID ID 
. He is co-author of two international patents.